advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower gate charge r ds(on) 160m ? fast switching characteristic i d 9a halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.5 /w rthj-a 62.5 /w rthj-a maixmum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 28 -55 to 150 operating junction temperature range -55 to 150 total power dissipation 3 2 continuous drain current, v gs @ 10v 5.6 pulsed drain current 1 30 gate-source voltage + 20 continuous drain current, v gs @ 10v 9 parameter rating drain-source voltage 100 a p18t10gh/j-hf halogen-free product 201009102 1 maximum thermal resistance, junction-ambient (pcb mount) 3 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap18t10gj) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 160 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 5.6 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 10 16 nc q gs gate-source charge v ds =80v - 2.5 - nc q gd gate-drain ("miller") charge v gs =10v - 4.5 - nc t d(on) turn-on delay time 2 v ds =50v - 6.5 - ns t r rise time i d =5a - 10 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =10v - 13 - ns t f fall time r d =10 ? - 3.4 - ns c iss input capacitance v gs =0v - 425 680 pf c oss output capacitance v ds =25v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 33 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =5a, v gs =0v - 53 - ns q rr reverse recovery charge di/dt=100a/s - 130 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap18t10gh/j-hf 2
a p18t10gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 7.0v 6.0 v 5.0 v v g =4.5v 0 4 8 12 16 20 048121620 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10 v 9.0 v 8.0v 7.0v v g = 5.0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 120 160 200 240 280 45678910 v gs gate-to-source voltage (v) r ds(on) (m ) i d =5a t c =25 o c 1.4 1.8 2.2 2.6 3.0 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
ap18t10gh/j-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =80v i d =5a q v g 10v q gs q gd q g charge 10 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
|
